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0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 0.1 1 10 100 SF10JC6 tc=150c[max] tc=150c[typ] tc= 25c[max] tc= 25c[typ] 0.2 0.5 2 5 20 50 forward voltage pulse measurement per diode forward voltage i f [a] forward current v f [v]
0 1020304050607080 0.0001 0.001 0.01 0.1 1 10 100 SF10JC6 tc=125c [typ] tc=100c [typ] tc=75c [typ] tc=50c [typ] tc=25c [typ] tc=150c [typ] reverse current pulse measurement per diode reverse voltage v r [v] i r [ma] reverse current
0 2 4 6 8 10 12 14 0246810121416 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 SF10JC6 io tp td=tp/t tj = 150c p f [w] forward power dissipation i o [a] average rectified forward current forward power dissipation
0 1 2 3 4 5 0 10203040506070 dc d=0.05 0.1 0.2 0.3 0.5 sin 0.8 SF10JC6 tj =150c 0 tp t d=tp/t v r v r [v] reverse voltage reverse power dissipation p r [w] reverse power dissipation
0 20 40 60 80 100 120 140 160 0 5 10 15 20 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 SF10JC6 v r =30v io 0 0 v r tp t d=tp/t derating curve i o [a] tc [c] case temperature average rectified forward current
0 20 40 60 80 100 120 140 1 10 100 2 5 20 50 SF10JC6 peak surge forward capability i fsm 10ms 10ms 1 cycle i fsm [a] peak surge forward current number of cycles [cycle] non-repetitive, sine wave, tj=25c before surge current is applied
10 100 1000 0.1 1 10 SF10JC6 5000 2000 500 200 50 20 0.2 0.5 2 5 20 60 f=1mhz tc=25c typ per diode reverse voltage v r [v] junction capacitance junction capacitance c j [pf]

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